Solid-state microwave annealing of ion-implanted 4H–SiC

Solid-state microwave annealing of ion-implanted 4H–SiC

Solid-state microwave annealing was performed at temperatures up to 2120 C for 30 s on ion-implanted 4H–SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 C is 2.65 nm for 10 lm · 10 lm atomic force microscopy scans. The sheet resistances measured on Aland P-implanted 4H–SiC, annealed by microwaves, are lower than the best conventional furnace anneali...

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon

The kinetics of stressed solid-phase epitaxial growth (SPEG), also referred to as solid-phase epitaxy, solidphase epitaxial regrowth, solid-phase epitaxial recrystallization, and solid-phase epitaxial crystallization, of amorphous (a) silicon (Si) created via ion-implantation are reviewed. The effects of hydrostatic, in-plane uniaxial, and normal uniaxial compressive stress on SPEG kinetics are...

Ultrahigh-temperature microwave annealing of Al+- and P+-implanted 4H-SiC

In this work, an ultrafast solid-state microwave annealing has been performed, in the temperature range of 1700–2120 °C on Al+and P+-implanted 4H-SiC. The solid-state microwave system used in this study is capable of raising the SiC sample temperatures to extremely high values, at heating rates of 600 °C/s. The samples were annealed for 5–60 s in a pure nitrogen ambient. Atomic force microscopy...

Microwave Ion Source for Low Charge State Ion Production

The Plasma and Ion Source Technology Group at LBNL have developed a microwave ion source. The source consists of a stainless-steel plasma chamber, a permanent-magnet dipole structure and a coaxial microwave feed. Measurements were carried out to characterize the plasma and the ion beam produced in the ion source. These measurements included current density, charge state distribution, gas effici...